
Prof. Jeehwan Kim
Primary DLC
Areas of Interest and Expertise
Graphene-Based Wafer-Scale Device Exfoliation/Transfer for Wearable Electronics
Wafer-Scale Single-Crystalline 2D Materials
Atomic-Precision 2D Material Manipulation
Dislocation/Crack Engineering for Advanced Nanoelectronics
Heteroepitaxy/van der Waals Epitaxy
Advanced Photovoltaics
Three-Dimensional Solar Cell Architectures
Mechanical Exfoliation of Solar Cells
Organic/Inorganic Hybrid sSolar Cells
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Projects
January 22, 2019Department of Mechanical Engineering
Towards Dislocation-Free GaN
Principal Investigator Jeehwan Kim
January 22, 2019Department of Mechanical EngineeringBreathable Electronic Skin Sensor Array through All-in-One Device Transfer
Principal Investigator Jeehwan Kim
May 3, 2018Department of Mechanical EngineeringRemote Epitaxy Through Graphene for Two-Dimensional Material Based Layer Transfer
Principal Investigator Jeehwan Kim
May 3, 2018Department of Mechanical EngineeringNovel Device (Resistive Switching Device, Memristor) Structure for Neuromorphic Computing Array
Principal Investigator Jeehwan Kim
September 18, 2015Department of Mechanical EngineeringJeehwan Kim Research Group
Principal Investigator Jeehwan Kim
September 18, 2015Department of Mechanical EngineeringGraphene-Based Layer Transfer
Principal Investigator Jeehwan Kim
September 18, 2015Department of Mechanical EngineeringSingle-Crystalline Graphene Electronics
Principal Investigator Jeehwan Kim
September 18, 2015Department of Mechanical EngineeringAdvanced Photovoltaics
Principal Investigator Jeehwan Kim
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Video
2024 MIT R&D Conference: The Next Generation of MTL Leaders & Innovators - Part 1
The Next Generation of MTL Leaders and Innovators (Part 1)
Jeehwan Kim
Associate Professor, MIT Department of Mechanical Engineering and Department of Materials Science and EngineeringSuraj Cheema
Assistant Professor, MIT Department of Electrical Engineering and Computer Science and Department of Materials Science and EngineeringJoseph Casamento
Assistant Professor, MIT Department of Materials Science and EngineeringJelena Notaros
Assistant Professor, MIT Department of Electrical Engineering and Computer Science2023-Vienna-Kim
Building the Next Generation of Electronics—Flexible Electronics -- New Technology 2022-Japan-Jeehwan-Kim
Jeehwan Kim
Associate Professor, MIT Mechanical Engineering10.2021-Sense.nano-Jeehwan-Kim
Jeehwan Kim | Associate Professor, MIT Mechanical Engineering 10.2021-Sense.nano-Session 1-Movement-Motion-Q-A
Brian Anthony | Associate Director, MIT.nano Ellen Roche
Associate Professor, MIT Mechanical Engineering
Jeehwan Kim
Associate Professor, MIT Mechanical Engineering Neville Hogan
Professor, MIT Mechanical Engineering; Professor, MIT Brian & Cognitive SciencesPowering the Next Generation of Electronics
Jeehwan Kim
Associate Professor of Mechanical Engineering
Principal Investigator, Research Laboratory of ElectronicsJeehwan Kim - 2017 Japan
Extremely cost-effective semiconductor layer-transfer process via graphene & Highly uniform advanced RRAM
As a strategy to save the cost of expensive substrates in semiconductor processing, the technique called “layer-transfer” has been developed. In order to achieve real cost-reduction via the “layer-transfer”, the following needs to be insured: (1) Reusability of the expensive substrate, (2) Minimal substrate refurbishment step after the layer release, (3) Fast release rate, and (4) Precise control of a released interface. Although a number of layer transfer methods have been developed including chemical lift-off, optical lift-off, and mechanical lift-off, none of those three methods fully satisfies conditions listed above. In this talk, we will discuss our recent development in a “graphene-based layer-transfer” process that could fully satisfy the above requirements, where epitaxial graphene can serve as a universal seed layer to grow single-crystalline GaN, III-V, II-VI and IV semiconductor films and a release layer that allows precise and repeatable release at the graphene surface. We will further discuss about cost-effective, defect-free heterointergration of semiconductors using graphene-based layer transfers.
Lastly, I will introduce our new research activities in developing advanced RRAM devices. Resistive switching devices have attracted tremendous attention due to their high endurance, sub-nanosecond switching, long retention, scalability, low power consumption, and CMOS compatibility. RRAMs have also emerged as a promising candidate for non-Von Neumann computing architectures based on neuromorphic and machine learning systems to deal with “big data” problems such as pattern recognition from large amounts of data sets. However, currently reported RRAM devices have not shown uniform switching behaviors across the devices with high on-off ratio which holds up commercialization of RRAM-based data storages as well as demonstration of large-scale neuromorphic functions. Recently, we redesigned RRAM devices and this new device structure exhibits most of functions required for large-array memories and neuromorphic computing, which are (1) excellent retention with high endurance, (2) excellent device uniformity, (3) high on/off current ratio, and (4) current suppression in low voltage regime. I will discuss about the characterization results of this new RRAM device.