Entry Date:
May 22, 2013

III-V and Silicon CMOS Process Integration

Principal Investigator Eugene Fitzgerald

Co-investigators Tonio Buonassisi , Jurgen Michel , Evelyn Wang , Carl Thompson , Yang Shao-Horn , Tomas Palacios , Li-Shiuan Peh


Although successful research in heteroepitaxy may mate III-V’s with silicon in a successful manner, the way in which the materials are deposited and the sequence they are deposited with respect to silicon CMOS processing determines the utility of integrated circuits based on this new materials platform.