Principal Investigator Eugene Fitzgerald
Co-investigators Tonio Buonassisi , Jurgen Michel , Evelyn Wang , Carl Thompson , Yang Shao-Horn , Tomas Palacios , Li-Shiuan Peh
The key to creating a new innovative path in the integrated circuit industry is the ability to deposit thin films of high quality on dissimilar substrates. In this research, we will be depositing III-V materials on silicon substrates, sometimes depositing SiGe as an intermediary. The arsenides, the phosphides, and nitrides will be explored, and the goal of this program is to both advance the state of the art as well as move heteroepitaxy onto large 200mm silicon wafers.