10.14.20-MRL-After-Moores-Fitzgerald

Conference Video|Duration: 43:59
October 14, 2020
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    Mankind’s insatiable desire for connectivity, communication, computation, and improvement in standards of living will continue to drive transitions in integrated circuit technology, as it has done in the past.  As increasing transistor density no longer delivers the required value, new directions will appear to build the future integrated circuits that continue to drive these holistic needs.  Designing silicon integrated circuits enabled by inserting new devices is such a path of new value.  III-V devices have been monolithically integrated into silicon manufacturing processes, demonstrating novel functionality in silicon circuits containing GaN LEDs and GaN transistors.  The methods used for monolithic incorporation of III-V devices into silicon ICs are independent of a particular material or device, so such methods could continue to keep silicon great far into the future.
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  • Video details
    Mankind’s insatiable desire for connectivity, communication, computation, and improvement in standards of living will continue to drive transitions in integrated circuit technology, as it has done in the past.  As increasing transistor density no longer delivers the required value, new directions will appear to build the future integrated circuits that continue to drive these holistic needs.  Designing silicon integrated circuits enabled by inserting new devices is such a path of new value.  III-V devices have been monolithically integrated into silicon manufacturing processes, demonstrating novel functionality in silicon circuits containing GaN LEDs and GaN transistors.  The methods used for monolithic incorporation of III-V devices into silicon ICs are independent of a particular material or device, so such methods could continue to keep silicon great far into the future.
Locked Interactive transcript