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Extremely cost-effective semiconductor layer-transfer process via graphene & Highly uniform advanced RRAM

As a strategy to save the cost of expensive substrates in semiconductor processing, the technique called “layer-transfer” has been developed. In order to achieve real cost-reduction via the “layer-transfer”, the following needs to be insured: (1) Reusability of the expensive substrate, (2) Minimal substrate refurbishment step after the layer release, (3) Fast release rate, and (4) Precise control of a released interface. Although a number of layer transfer methods have been developed including chemical lift-off, optical lift-off, and mechanical lift-off, none of those three methods fully satisfies conditions listed above. In this talk, we will discuss our recent development in a “graphene-based layer-transfer” process that could fully satisfy the above requirements, where epitaxial graphene can serve as a universal seed layer to grow single-crystalline GaN, III-V, II-VI and IV semiconductor films and a release layer that allows precise and repeatable release at the graphene surface. We will further discuss about cost-effective, defect-free heterointergration of semiconductors using graphene-based layer transfers.

Lastly, I will introduce our new research activities in developing advanced RRAM devices. Resistive switching devices have attracted tremendous attention due to their high endurance, sub-nanosecond switching, long retention, scalability, low power consumption, and CMOS compatibility. RRAMs have also emerged as a promising candidate for non-Von Neumann computing architectures based on neuromorphic and machine learning systems to deal with “big data” problems such as pattern recognition from large amounts of data sets. However, currently reported RRAM devices have not shown uniform switching behaviors across the devices with high on-off ratio which holds up commercialization of RRAM-based data storages as well as demonstration of large-scale neuromorphic functions. Recently, we redesigned RRAM devices and this new device structure exhibits most of functions required for large-array memories and neuromorphic computing, which are (1) excellent retention with high endurance, (2) excellent device uniformity, (3) high on/off current ratio, and (4) current suppression in low voltage regime. I will discuss about the characterization results of this new RRAM device.