High-Power Broadband Radiation Sources

The approach consolidates the following efforts:
(*) Optimum device operation conditions for best high-frequency performance
(*) Novel electromagnetic circuit structures with compact size and low loss overhead
(*) Efficient broadband on-chip radiation and quasi-optical power combining

Chip Prototypes:

(*) 260-GHz broadband pulse source in 65-nm CMOS -- Designed for THz spectrometer and high-resolution pulsed radar, this chip generates a radiated power of 1.1 mW (CW) and pulses with bandwidth of 25 GHz. The high power is due to a new “Self-Feeding” oscillator structure proposed in this work.

(*) 320-GHz radiator array in 130-nm SiGe BiCMOS -- This transmitter demonstrates the first fully-integrated phase-locking capability for a THz radiation in silicon THz sources. Meanwhile, the generated 3.3-mW radiated power is the new record.