Carbon nanotubes (CNTs) are currently massively investigated due to their remarkable mechanical, thermal, chemical, and electrical properties. CNTs are seamless graphite tubes that can be grown using diverse methods such as arc deposition, chemical vapor deposition (CVD), and plasma-enhanced chemical-vapor-deposition (PECVD). The best performance comes from CNTs made of a single graphite sheet, i.e., single-walled carbon nanotubes (SWNTs). SWNTs are 1 – 2 nm in diameter and can have lengths over several centimeters. Both in-plane and out-of-plane SWNTs are useful in the device industry. In-plane SWNTs can be used as the channel in transistors, while out-of-plane SWNTs can be used in circuit vias. We are currently investigating the growth of CVD SWNTs using our PECVD reactor. A forest of in-plane SWNTs can be grown using a methane/hydrogen chemistry at 200 Torr and 880°C if 2 Å Fe is used as a catalyst on top of quartz substrates. Sparse forests can be formed at lower pressures and temperatures. Current research focuses on investigating the growth space for in-plane SWNTs and developing growth recipes for out-of-plane SWNTs. With this information, devices will be designed and implemented.