Principal Investigator Eugene Fitzgerald
We report the fabrication of a novel substrate platform for the monolithic integration of Si-based CMOS and GaAs-based optoelectronic devices. This platform, which we refer to as silicon on lattice-engineered substrate (SOLES), consists of a compositionally graded Si1−xGex buff er buried underneath a silicon-oninsulator (SOI) structure, all fabricated on a Si substrate. CMOS circuits can be fabricated in the silicon device layer at the surface, and III-V devices can be fabricated by etching through the SOI at the surface and using selective area epitaxy to grow the III-V device structures. We have demonstrated a process for production of the SOLES platform and fabricated an array of InGaP LEDs on a SOLES wafer.