Principal Investigator Jung-Hoon Chun
Co-investigator Nannaji Saka
A novel in situ detection technique, based on the change of the reflectance of the patterned surface at different polishing stages, is developed to detect the process end-point and slurry-switching point in multi-step Cu CMP. Models that employ light scattering theory and statistical treatment correlate the sampled reflectance with the surface topography and Cu area fraction for detecting the process regime and end-point. Developed multi-step dielectric erosion and Cu dishing models are applied to minimize resulting Cu thinning.