Emmanuel Landsman CD Associate Professor of Electrical Engineering
MIT Department of Electrical Engineering and Computer Science
First, we will focus on GaN, a wide bandgap semiconductor with ideal properties to address the energy challenge our society is currently facing. Through solid state lighting and power electronics, GaN semiconductor devices could save more than 20% of the world´s energy consumption. In this talk we will describe some of the devices that will make this happen.
At the opposite end of the bandgap spectrum, graphene, a two-dimensional structure of carbon atoms with sp2 bonding, has demonstrated the highest electron and hole mobility at room temperature in any semiconductor material. We will describe how this one-atom-thick material is quickly becoming the building block for a new generation of ubiquitous electronics.